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| SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications * * Small package Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) 0.95 0.95 2.90.2 +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 3 0.3 +0.2 1.1-0.1 Unit: mm : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 1 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 60 20 200 800 200 150 -55 to 150 Unit V V mA mW C C 1.9 Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range S-MINI JEDEC 1.Gate 2.Source 3.Drain TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 20 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V Drain-source ON-resistance RDS (ON) ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Ciss Crss Coss td(on) td(off) VDD = 30 V , ID = 200 mA , VGS = 0 to 10 V VDS = 25 V, VGS = 0, f = 1 MHz Min 60 1.0 170 Typ 2.0 2.1 2.2 17 1.4 5.8 2.4 26 Max 10 1 2.5 3.0 3.2 3.3 pF pF pF ns Unit A V A V mS 0~0.1 4.0 40 1 2007-11-01 +0.1 0.16-0.06 SSM3K7002F Switching Time Test Circuit (a) Test circuit 10 V 0 IN 50 0V RL VDD OUT (b) VIN 10 V 90 % 10 % 10 s VDD = 30 V Duty < 1% = VIN: tr, tf < 2 ns (Zout = 50 ) Common Source Ta = 25 C (c) VOUT VDD 10 % 90 % tr td(on) td(off) tf VDS (ON) Marking 3 Equivalent Circuit (top view) 3 NC 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 0.25 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K7002F ID - VDS 1000 900 800 D ra in C u rre n t ID (m A ) 700 600 500 400 300 200 100 0 0 0.5 1 1.5 Drain-Source Voltage VDS (V) 2 2.7 2.5 VGS = 2.3 V 0.01 0 1 2 3 Gate-Source Voltage VGS (V) 4 5 Common Source Ta = 25 C 7 10 3.3 3.0 5 4.5 4.0 100 D ra in C u rre n t ID (m A ) 1000 Common Source VDS = 10 V ID - VGS 10 Ta = 100 C 1 25 C - 25 C 0.1 5 D ra in -S o u rce O N -R e sista n ce R D S (ON ) ( ) RDS(ON) - ID Common Source Ta = 25 C 5 D ra in -S o u rce O N -R e sista n ce R D S (ON ) ( ) RDS(ON) - VGS Common Source ID = 100 mA 4 4 Ta = 100 C 3 VGS = 4.5 V 2 5.0 V 3 2 25 C 10 V 1 1 - 25 C 0 10 100 Drain Current ID (mA) 1000 0 0 2 4 6 Gate-Source Voltage VGS (V) 8 10 5 Common Source 4 D ra in -S o u rce ON -R e sista n ce R D S (O N ) ( ) RDS(ON) - Ta 2 G a te Th re sh o ld V o lta g e V th (V ) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 Ambient Temperature Ta (C) 125 150 -25 0 Vth - Ta Common Source ID = 0.25 mA VDS = 10 V VGS = 4.5 V , ID = 100 mA 3 2 5.0 V , 100 mA 10 V , 500 mA 1 0 25 50 75 100 Ambient Temperature Ta (C) 125 150 3 2007-11-01 SSM3K7002F |Yfs| - ID 1000 D ra in R e ve rse C u rre n t ID R (m A ) Fo rw a rd Tra n sfe r A d m itta n ce |Y fs| (m S ) Common source VDS = 10 V Ta = 25 C 1000 900 800 700 600 500 400 300 200 100 0 10 100 Drain Current ID (mA) 1000 0 -0.2 S G IDR - VDS Common Source VGS = 0 V Ta = 25 C D IDR 100 10 -0.4 -0.6 -0.8 -1 Drain-Source Voltage VDS (V) -1.2 -1.4 100 C - VDS Common Source VGS = 0 V f = 1 MHz Ta = 25 C Ciss Coss 10000 t - ID Common Source VDD = 30 V VGS = 0 to 10 V Ta = 25 C 10 S w itch in g Tim e t (n s) C a p a cita n ce C (p F) 1000 tf 100 td(off) 10 td(on) tr Crss 1 0.1 1 10 Drain-Source Voltage VDS (V) 100 1 1 10 100 Drain Current ID (mA) 1000 PD - Ta 250 D ra in P o w e r D issip a tio n P D (m W ) 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature Ta (C) 140 160 4 2007-11-01 SSM3K7002F RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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